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| NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current Absolute Maximum Ratings: Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown V(BR)CES IC = 1mA, IB = 0, Note 1 Voltage Collector-Base Breakdown Voltage V(BR)CBO IC = 1.0A, IE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10A, IC = 0 ICBO IEBO VCB = 40V, IE = 0 VBE = 10V, IC = 0 50 600 12 - - - - - - - - - - 100 100 V V V nA nA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance fT Ccb IC = 200mA, VCE = 5V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 100 - - - 1000 10 MHz pF hFE VCE(sat) VBE(on) IC = 200mA, VCE = 5V IC = 1000mA, VCE = 5V IC = 1000mA, IB = 2mA IC = 1000mA, VCE = 5V 25,000 4,000 - - - - - - - 40,000 1.5 2.0 V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2% .339 (8.62) Max Seating Plane C B .512 (13.0) Min .026 (.66) Dia Max E EBC .100 (2.54) .200 (5.08) Max .240 (6.09) Max |
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